銦的英文,英語(yǔ),indium是什么意思,indium中文翻譯,indium怎么讀、發(fā)音、用法及例句
?indium
indium 發(fā)音
英:[??ndi?m] 美:[??ndi?m]
英: 美:
indium 中文意思翻譯
常見(jiàn)釋義: 銦
n.[化學(xué)]銦(49號元素)
indium 短語(yǔ)詞組
1、indium arsenide ─── [建] 砷化銦
2、Indium tin oxide ─── 氧化銦錫
3、indium stibide ─── [化] 銻化銦
4、indium monobromide ─── [化] 一溴化銦
5、indium antimonide ─── [化] 銻化銦
6、indium oxychloride ─── [化] 氯氧化銦
7、indium trichloride ─── [化] 三氯化銦
8、indium phosphide ─── [建] 磷化銦
9、indium dichloride ─── [化] 二氯化銦
10、indium trisulfide ─── [化] 三硫化二銦
11、rubidium indium alum ─── [化] 銦銣礬
12、indium reduction ─── 銦的還原
13、Indium gallium zinc oxide ─── 銦鎵氧化鋅
14、indium monosulfide ─── [化] 一硫化二銦
15、indium chloride ─── [建] 氯化銦
16、cesium indium alum ─── [化] 銫銦礬; 硫酸銦銫
17、indium sesquioxide ─── [化] 三氧化二銦
18、indium (electro)plating ─── [化] 電鍍銦
19、indium sulfate ─── [建] 硫酸銦
indium 詞性/詞形變化,indium變形
簡(jiǎn)寫(xiě)符號: In |
indium 常用詞組
indium oxide ─── 氧化銦
indium 相似詞語(yǔ)短語(yǔ)
1、indicium ─── n.標記;征候;郵戳
2、indic. ─── adj.印度的;印度語(yǔ)的;n.印度語(yǔ)系
3、indign ─── adj.不值得的;可恥的
4、indite ─── v.創(chuàng )作,寫(xiě)成文章
5、iridium ─── n.[化學(xué)]銥(Ir)
6、indies ─── n.印度地方,西印度群島
7、indigo ─── n.靛藍,靛藍染料;靛藍色;槐藍屬植物;adj.靛藍色的
8、indict ─── vt.控告,起訴;[法]揭發(fā)
9、indiv. ─── 個(gè)人。
indium 常見(jiàn)例句(雙語(yǔ)使用場(chǎng)景)
1、In this study, indium nitride nanowire was successfully grown by MOCVD system.Structure studied by x-ray diffraction (XRD) spectra and Raman spectrometer. ─── 一維奈米結構是能有效率的傳輸電子的最小尺度,也因此是理想中適合奈米尺度系統如此極端及多樣化的工作環(huán)境。
2、Amalgam was mixed with mercury by the silver, copper and the tin powder.It s properties can be improved by adding few metals like zinc, indium and palladium . ─── 中文摘要汞齊合金主要是以銀、銅與錫之合金粉末與汞混合而成的合金,有時(shí)也會(huì )添加少量金屬(如鋅、銦、鈀等)以改善其性質(zhì)。
3、INDIUM DOPING ON MBE GROWN HgCdTe ─── HgCdTe分子束外延In摻雜研究
4、most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS). ─── 目前為止,光電薄膜最有效的材質(zhì)是銅銦硒化鎵(CIGS)。
5、The common methods of reclaiming indium from the byproducts of lead metallurgy and zinc hydrometallurgy are enumerated,and analyzed every method's virtue and shortcoming. ─── 主要列舉了從鉛冶煉和鋅濕法冶煉過(guò)程的副產(chǎn)品中回收銦的常用方法,并分析了各種方法的優(yōu)缺點(diǎn)。
6、The etch pit density of SI-GaAs crystals can reach the order of 10~2/cm~2.There is no microprecipitate of indium in the crystals. ─── 晶體中位錯腐蝕坑密度達到約10~2/cm~2數量. 晶體中沒(méi)有觀(guān)察到銦的微沉淀物.
7、Material containing low indium ─── 低銦物料
8、According to the principle that the property of indium and zinc is similar,the indium is enriched from zinc leached residue by vaporization process in kiln,the recovery rate of indium and zinc is greater than 80% and 90% respectively. ─── 根據鋅、銦性質(zhì)類(lèi)似的原理,利用回轉窯揮發(fā)法處理低銦的鋅浸出渣,鋅的回收率大于90%,銦的回收率大于80%。
9、It introduces the process of recovering Indium from Lead reverberatory dust with H2SO4 leaching-P204 extraction. ─── 摘要文章介紹了用H2SO4浸出-P204萃取法從鉛浮渣反射爐煙灰中回收銦的生產(chǎn)流程。
10、INDIUM RECOVERY FROM INDIUM CONTAINING RESIDUE BY L-SX PROCESS ─── 低酸浸出-溶劑萃取法從含銦渣中回收銦
11、Application of Indium Tin Oxide Film to Optical Solar Reflector ─── 氧化銦錫薄膜在光學(xué)太陽(yáng)反射鏡上的應用
12、A microchip that costs $5 to make from silicon, using the standard complementary metal oxide semiconductor (CMOS) process, would cost about $500 to fabricate from indium phosphide. ─── 使用標準的互補式金氧半導體(CMOS)制程,以矽做的微晶片成本如果是五美元,以磷化銦制作則得花上500美元。
13、The JACS article outlines the mechanism with indium oxide nanocrystals. ─── 彭表示:“我們將這一方法應用于其它體系。
14、radioactive isotope of indium ─── 111銦, 114銦
15、magnesium and indium co-doped lithium niobate crystal ─── 摻鎂銦鈮酸鋰晶體
16、Nonlinear optical properties of indium tin oxide (ITO) films have been investigated by using second harmonic generation (SHG) technique. ─── 利用二次諧波產(chǎn)生技術(shù)研究了氧化銦錫薄膜的非線(xiàn)性光學(xué)特性。
17、The reclaim of indium from the course of nonferrous metallurgy ─── 有色冶金過(guò)程中銦的回收
18、The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS). ─── 目前為止,光電薄膜最有效的材質(zhì)是銅銦硒化鎵(CIGS)。
19、INTERCONNECTION OF INDIUM COLUMN FOR HYBRID InSb INFRARED CCD ARRAY ─── InSb混成紅外CCD銦柱互連
20、One is indium tin oxide. ─── 一種是氧化錫銦。
21、The adsorption of humic acid with gallium and indium was studied. The ideal equation of adsorption isotherm about the experimental data was proposed, and the reaction mechanism was discussed. ─── 對腐植酸與鎵、銦的吸附作用作了實(shí)驗研究,提出了擬合實(shí)驗數據的理想吸附等溫方程,并對作用機理予以推斷。
22、The foreground of applying indium tin oxide film to heat-insulating and energy|saving in glass field has been analysed. ─── 分析了氧化銦錫薄膜應用于玻璃領(lǐng)域隔熱節能的前景。
23、Indium can be obtained from the leachant by extraction, chemical replacement and electrowinning.The article provides experiment data and technical support for reuse and detoxification of LCD. ─── 得到的銦的酸液經(jīng)過(guò)萃取、置換和電解,可以得到銦的產(chǎn)品,為液晶顯示器的資源化和無(wú)害化提供實(shí)驗數據和技術(shù)支持。
24、Extraction of Indium From Dust of Lead Scum Reverberatory ─── 從鉛浮渣反射爐煙塵中提取銦的新工藝研究
25、The invention relates to a solar battery cuprum-indium-gallium-selenium film key target material and a preparation method thereof. ─── 本發(fā)明涉及一種太陽(yáng)能電池銅銦鎵硒薄膜關(guān)鍵靶材及其制備方法。
26、The effect of change in Indium content on the anti-ageing, weldability, and surface roughness of tin-lead-indium alloy deposit was discussed. ─── 本文提出錫-鉛-銦合金電鍍工藝,探討了銦含量的變化對錫-鉛-銦合金鍍層抗老化性、可焊性和光潔度的影響。
27、The study progress and research trend at present on the complex of scattered elements involving gallium, indium and thallium have been described. ─── 概述了稀散元素鎵、銦和鉈配合物的研究進(jìn)展和目前研究動(dòng)向.
28、The recovery of indium from waste ITO target is a problem to be dealt with urgently in production. ─── 從ITO廢靶中回收銦是生產(chǎn)中亟待解決的問(wèn)題。
29、Abstract: The adsorption of humic acid with gallium and indium was studied. The ideal equation of adsorption isotherm about the experimental data was proposed, and the reaction mechanism was discussed. ─── 文摘:對腐植酸與鎵、銦的吸附作用作了實(shí)驗研究,提出了擬合實(shí)驗數據的理想吸附等溫方程,并對作用機理予以推斷。
30、Indium tin oxide (ITO) thin films ─── ITO膜
31、tin-doped indium oxide films ─── 摻錫氧化銦薄膜
32、It is found that the indium contents and distributions of QWs may effect the optical properties a lot. ─── 我們發(fā)現量子井的濃度及在樣品中的分布位置會(huì )對樣本之光學(xué)特性產(chǎn)生很大的影響。
33、If the nickel composition in the sample is less than 70%, the electrons is transported by the route formed on indium particle.Then the electric property is similar. ─── 當樣品中鎳含量在70%以下時(shí),電子主要的傳導路徑為銦微粒所形成的導電通路,因此電性較相似。
34、A further discussion is made of how to improve the technology to increase indium residue's grade and indium recovery . ─── 就如何改進(jìn)生產(chǎn)工藝,以提高銦渣品位及銦回收率作了較深入地探討。
35、From the SSA images, we calibrate the average indium contents of the QWs. ─── 同時(shí)我們亦由應力分布分析計算其各個(gè)量子井的平均銦濃度。
36、indium phosphide nanocrystallite ─── InP納米晶
37、EXTRACTION OF INDIUM FROM COPPER REFINERY ASH ─── 從銅煙灰中提取銦
38、In TEM results, we find that H2 process lead to stronger indium confinement in the well layers and can suppress the spinodal decomposition in the rim part of the wafer. ─── 在高解析度穿透式電子顯微術(shù)結果中,我們發(fā)現經(jīng)由氫氣的處理,銦原子主要局限于井層,同時(shí)也減輕晶圓的邊緣處的銦密集的效應。
39、The resources, manufacturers, present situation of industrial manufacture, and applications of Indium are recited, and its prospect is forecasted. ─── 本文敘述了銦的資源、生產(chǎn)廠(chǎng)家、工業(yè)生產(chǎn)現狀、用途,并展望了其發(fā)展前景。
40、After further experimentation, they found what they were looking for in a more exotic stuff called indium antimonide . ─── 經(jīng)過(guò)更進(jìn)一步的研究,他們發(fā)現自己所尋找的是一種名字聽(tīng)起來(lái)很不同尋常的物質(zhì)———銻化銦。
41、Guangxi zincum and indium Products Manufactory ─── 廣西鋅銦制品廠(chǎng)
42、This paper reveals a novel magneto-optic recording characteristic of Indium Bismuth Calcium Vitriol Iron Garnet (In-BiCaVIG) crystals in high power microwave (HPM) field. ─── 報道了銦鉍鈣釩鐵石榴石 (In BiCaVIG)晶體在高功率微波場(chǎng)中的新穎磁光記錄特性。
43、Effect of Seignette Salt Dose on Indium Analysis in EDTA Titration ─── EDTA滴定法中酒石酸鉀鈉用量對銦分析的影響
44、For this purpose, at least one indium tin oxide layer (10) is present in at least one of the further recording stacks (3). ─── 為此目的,至少有一個(gè)銦錫氧化物層(10)位于至少一個(gè)另外的記錄疊(3)中。
45、The possibility of applying Indium Tin Oxide (ITO) film in the automobile front windshield has been analyzed by conducting two thermal shielding and one saving energy experiments. ─── 摘要通過(guò)兩個(gè)隔熱實(shí)驗和一個(gè)節能實(shí)驗,深入分析了ITO薄膜用于汽車(chē)前擋風(fēng)玻璃的可能性。
46、The paper introduced the trend and recovery method of indium in its vertical retort process, togethered with the production practice, put forward method to improve the output of indium. ─── 介紹了銦在鋅的火法冶煉過(guò)程中的走向及其生產(chǎn)工藝,然后結合生產(chǎn)實(shí)踐,提出了提高銦產(chǎn)量的辦法。
47、Studies on the effectiveness of carbon dioxide snow jet cleaning and low-frequency ultrasonic cleaning in cleaning indium tin oxide(ITO) glass were carried out. ─── 對干冰微粒噴射法和低頻超聲波法清洗ITO玻璃的效果進(jìn)行了比較研究。
48、Determination of Indium in Scoria and Cigaretteash by AAS ─── 原子吸收光譜法測定礦渣、煙灰中的微量銦
49、In one of the samples, a low indium InGaN/GaN QW is grown before five high-indium ones, which are grown under the same conditions as those for growing the five QWs in another sample. ─── 其中一片樣品在成長(cháng)和另一樣品相同的高濃度量子井結構之前,先成長(cháng)一低濃度之量子井結構。
50、Since the reaction of chemistry is fast, the diffusion reaction should be intensified to improve the leaching rate of indium. ─── 由于化學(xué)反應較快,因此要提高銦的浸出效率,應設法強化擴散效應。
51、Indium - methyl - ethyl - diketone ─── 乙酰丙酮銦
52、To prevent non-ohmic contacts, choose an appropriate contact material, such as indium or gold. ─── 為了避免非歐姆接觸現象,應當選用適當的接點(diǎn)材料,例如銦或者金。
53、optically optimal indium antimonid infrared detector ─── 光優(yōu)型銻化銦紅外探測器
54、Indium, for example, had previously been assigned an atomic mass between those of arsenic and selenium. ─── 例如,人們以前認為銦的原子質(zhì)量介于砷和硒之間。
55、The first P-type covering layer (61) which composed of P-type nitride semiconductor containing indium and gallium sets contacting with one side of the active layer. ─── 一個(gè)由含鋁和鎵的P型氮化物半導體構成的第一P型覆蓋層(61)被設置與有源層的一個(gè)面接觸。
56、Recovery Indium from Waster ITO Target ─── ITO廢靶回收金屬銦
57、Paiva A P.Recovery of indium from aqueous solutions by solvent extraction[J].Separation Science and Technology,2001,36:1395. ─── 劉大春,楊斌,戴永年,杜國山,唐萬(wàn)啟,韓龍.從富銦渣提取金屬銦的研究[J].稀有金屬,2005,29(4):574.
58、Study on Recovering Indium from Lead Dust with High Arsenic ─── 從高砷鉛煙塵中回收銦的試驗研究
59、Indium neutralizing precipitation ─── 中和沉銦
60、four water indium trichloride ─── 四水合三氯化銦
61、Of course there can be alloy compositions that contain bismuth, indium, and zinc. ─── 當然,合金成分可以包含鉍、銦和鋅。
62、Vertical gradient freeze (VGF) technology is a proven technique for growing semiconductors composed of multiple elements that include: gallium, arsenic, indium, and phosphorus. ─── 垂直傾斜結冰技術(shù)是被驗證為成長(cháng)半導體多樣元素的混合,包括,鍺,砷,銦和磷。
63、It describes the designs of one kind of indium metallurgy and the progresses in production.After these process improvement,designing target level have reached. ─── 介紹了某企業(yè)銦冶煉工序的設計,總結了生產(chǎn)中的改進(jìn)。經(jīng)改進(jìn)后取得明顯效果,產(chǎn)量、質(zhì)量、定額指標均達到設計要求。
64、Jarosite process can obtain high recovery rate of zinc,simultaneously,most of indium remains in the jarosite residues and a little part of indium remains in the high acidities leaching residues. ─── 某鋅精礦中銦含量很高,采用黃鉀鐵礬法處理該高銦鋅精礦,在得到較高鋅回收率的同時(shí),大部分的銦進(jìn)入礬渣,少部分進(jìn)入高浸渣,從礬渣和高浸渣中可回收得到電銦。
65、The material of oar shape chemistry that phosphor turns indium chip to call photoetching glue through a kind on product line has package. ─── 磷化銦晶片在出產(chǎn)線(xiàn)上經(jīng)過(guò)一種稱(chēng)為光刻膠的漿狀化學(xué)物質(zhì)進(jìn)行包裹。
66、Keywords analytical chemistry;indium;polarography;CNI alloy; ─── 分析化學(xué);銦;示波極譜法;CNI合金;
67、The paper analyzes the reason of disqualified indium of purity indium and series of measures to improve the technology,the qualified purity indium of 99.995% can reach 100%. ─── 分析了精銦質(zhì)量不符合要求的原因,采取了一系列技術(shù)改進(jìn)措施,含銦99.995%精銦的合格率達100%。
68、Indium is a relatively rare metal with increasing economic importance in a variety of high-tech application fields such as semiconductors, solar cells and display devices like LCDS. ─── 摘要銦是一種稀有金屬,它在高科技產(chǎn)業(yè)中的應用價(jià)值越來(lái)越受到人們的普遍關(guān)注。由于供求矛盾突出,其消費價(jià)格水平不斷上漲。
69、Keywords ITO;sputtering;Indium;wetting;welding; ─── 氧化銦錫;濺射;銦;潤濕;焊接;
70、If power from the Sun is to become a major source of electricity, solar panels would have to cover huge areas, making an alternative to indium essential. ─── 如果要想把太陽(yáng)能變成電能的主要來(lái)源,太陽(yáng)能電池板就不得不覆蓋大范圍的地域,那么找一種可以替代銦的元素就很有必要了。
71、The commercial test for enrichment indium in B# tower bottom led by electrolysis was proceeded. ─── 為了有效富集B#塔底鉛中的銦,進(jìn)行了底鉛電解富集銦工業(yè)試驗。
72、AZO(aluminums zinc oxide films) which have many characteristics such as high ratio of performance to price and innoxious are the replacer of ITO(indium tin oxide films) . ─── 摻鋁的氧化鋅薄膜(AZO)具有性?xún)r(jià)比高、無(wú)污染等特點(diǎn),是摻錫氧化銦(ITO)的最佳替代產(chǎn)品。
73、Indium(113mIn)Pentate Complexion Injection ─── 放射性銦噴替酸鹽(113mIn)注射液, 銦(113mIn)-二乙三胺五醋酸注射液[診斷用藥]
74、In MOCVD growth, to increase the indium incorporation, the techniques of prestrain growth and flow-rate modulation are to be used. ─── 同時(shí),我們也將生長(cháng)氮化銦及高銦氮化銦鎵以為太陽(yáng)能電池之應用。
75、A description is made of the present situation and existing proble ms of indium enrichment of Zhuzhou Smelter. ─── 介紹了株洲冶煉廠(chǎng)銦富集的生產(chǎn)情況,提出了存在的問(wèn)題。
76、Technical process and application of indium are described ,and its future is also predicted. ─── 介紹了銦的生產(chǎn)工藝及應用,并對銦的開(kāi)發(fā)前景進(jìn)行了預測。
77、Keywords microwave irradiation;cycloalkanones;indium trichloride; ─── 微波輻射;環(huán)烷酮;三氯化銦;
78、lithium niobate doped with indium and iron crystal ─── 摻銦,鐵鈮酸鋰晶體
79、A Study on Improving Indium Leaching Rate from Le ad Dust ─── 提高某廠(chǎng)鉛煙灰銦浸出率的研究
80、Mercury-free paper liner contained indium ─── 無(wú)汞含銦漿層紙
81、In this paper,the practice of producing nanometer zincite and concentrating indium from the dust of smelting lead was introduced in detail. ─── 文章詳細介紹了利用鉛冶煉煙塵生產(chǎn)納米氧化鋅并富集銦的生產(chǎn)實(shí)踐。
82、Obviously, jarosite process can successfully extract both zinc and indium. ─── 可見(jiàn),黃鉀鐵礬法工藝處理高銦鋅精礦可以達到綜合回收鋅和銦的日的。
83、pentetate indium disodium[111In] ─── 噴替酸銦[111In]鈉
84、Global Solar uses a technology known as copper indium gallium selenide (CIGS) to make its thin-film solar cells. ─── 全球太陽(yáng)能利用技術(shù)稱(chēng)為銅銦鎵硒( CIGS )將其薄膜太陽(yáng)能電池。
85、Absorption Spectra and Photofading Research of an Indium Phthalocyanine Dye[J]. ─── 引用該論文 楊小兵,丁松濤,王安邦,李小銀,楊裕生.
86、indium and iron doped lithium niobate crystal ─── 雙摻銦鐵鈮酸鋰晶體
87、The researchers are trying to replace the indium oxide with cheaper oxides like aluminum oxide, which possesses similar properties. ─── 研究人員們正在試圖用具有類(lèi)似性質(zhì)的、較為便宜的氧化物像氧化鋁來(lái)取代氧化銦。
88、Suggested method for the micro-determinalion of indium,bismuth and vanadium is given. ─── 從中找出了某些規律,并對此進(jìn)行了討論。
89、The resistivity and surface roughness of Indium tin oxide(ITO) films will affect the light-emitting efficiency and lifetime of the organic light-emitting diodes(OLED). ─── 氧化銦錫(ITO)膜的電阻率及表面粗糙度將影響有機電致發(fā)光器件(OLED)的發(fā)光效率及其使用壽命。
tco靶材全稱(chēng)?
TCO靶材的全稱(chēng)是Transparent Conductive Oxide靶材,中文通常翻譯為透明導電氧化物靶材。這類(lèi)材料通常以薄膜形式應用于各種設備中,其特點(diǎn)是既具有良好的透明性,又具有良好的電導率。
常見(jiàn)的TCO材料包括銦錫氧化物(ITO,Indium Tin Oxide)、氟化錫(SnO2:F,Fluorine-doped Tin Oxide)和鋁摻雜的鋅氧化物(AZO,Aluminum-doped Zinc Oxide)等。
tco靶材全稱(chēng)?
透明導電薄膜。
tco作為一種n型半導體材料,具有高的導電率、高的可見(jiàn)光透過(guò)率、高的機械硬度和良好的化學(xué)穩定性。液晶顯示器(LCD)、等離子顯示、電致發(fā)光顯示器(EL/OLED)、觸摸屏(TouchPanel)、太陽(yáng)能電池以及其他電子儀表的透明電極上廣泛應用。
版權聲明: 本站僅提供信息存儲空間服務(wù),旨在傳遞更多信息,不擁有所有權,不承擔相關(guān)法律責任,不代表本網(wǎng)贊同其觀(guān)點(diǎn)和對其真實(shí)性負責。如因作品內容、版權和其它問(wèn)題需要同本網(wǎng)聯(lián)系的,請發(fā)送郵件至 舉報,一經(jīng)查實(shí),本站將立刻刪除。