?exciton

exciton發(fā)音

英：['eks?t?n]　　美：['eksa??t?n]

英：　　美：

exciton中文意思翻譯

n. 激子

exciton常見(jiàn)例句

1 、Mechanism on Energy Transfer of Photoluminescence Exciton in Erbium Doped Silicon───摻鉺硅光致發(fā)光激子傳遞能量機制

2 、(b)Exciton binding energy as afunction of barrier thicknessLAlGaN.───(b)激子結合能隨勢壘層厚度LAlGaN的變化。

3 、Binding Energy of an Exciton in the Ternary Mixed Crystal───三元混晶中激子的結合能

4 、The advance on the methodology of exciton coupled circular dichroism and its application in the determination of absoute configuration of natural products were reviewed.───本文綜述了圓二色譜激子手性法進(jìn)展及其在天然產(chǎn)物絕對構型確定中的應用。

5 、strong-coupling exciton───強耦合激子

6 、donor bound exciton───施主受約束激勵

7 、double acceptor bound exciton───雙受主約束激發(fā)子

8 、Model for exciton absorption in optical microcavity was built and programe of simulation of reflectivity and cavity mirror design were written.The optimal parameters for optical microcavity was given.───建立了微腔中激子光吸收的理論模型，編寫(xiě)出了微腔激光器腔鏡設計和模擬反射光譜的程序，給出了光學(xué)微腔設計的優(yōu)化參數；

9 、This redistribution of light will have a direct effect on the light absorption and the following exciton production and on the number of final free carriers that are collected by electrodes.───光在有機多層膜中的重新分布直接影響光在有機材料中的吸收和激子的產(chǎn)生，最終影響到可獲得的自由載流子的量。

10 、Organic electrophosphorescent devices can be used to circumvent the limitation in quantum efficiency of organic electroluminescent devices due to the spin-forbidden of triplet exciton transition.───摘要有機電致**光器件的設計和利用，可以突破由三線(xiàn)態(tài)激子躍遷自旋禁阻引起的有機電致熒光器件量子效率的限制。

11 、Electronic States and the Core Exciton of Superlattice ZnSe/GaAs───Znse/GaAs超晶格的電子態(tài)和芯態(tài)激子

12 、Phase Relaxation of Frenkel Exciton Migration in the Nanostructure Mixed Molecular Aggregates[J].───引用該論文 劉俊業(yè),鄭植仁,劉春旭,竇愷,黃世華,虞家琪.

13 、molecular exciton microscopy───分子激子顯微術(shù)

14 、Yang Hong-tao, Eerdunchaolu1, JI Wen-hui. The influence of the polaron effects on the properties of strong-coupling interface exciton in polar crystals. Chin. J. Lumin ., 28 （ 5 ）：（ 2007 ） . （待發(fā)表）───烏云其木格，楊洪濤，額爾敦朝魯，磁場(chǎng)對拋物量子點(diǎn)中極化子內部激發(fā)態(tài)的影響，固體電子學(xué)研究與進(jìn)展，27（4）：（2007）。（待發(fā)表）

15 、negatively charged exciton───帶負電荷激子

16 、From the time resolved photoluminescence spectra (TRPL),the lowest exciton emission luminescence peak of high luminescence efficiency and its fluorescence lifetime which was 28.5 ps fitted by tail fit were obtained.───時(shí)間分辨熒光光譜(TRPL)中觀(guān)察到發(fā)光效率高的最低激子發(fā)射峰,并測量其熒光衰減壽命,經(jīng)尾部擬合為28 .5 ps.

17 、Properties of Internal Excited State of the Strong Coupling Surface Exciton───強耦合表面激子內部激發(fā)態(tài)的性質(zhì)

18 、In this letter, to include the dopant effects, a “double-layer” model is proposed for describing the exciton diffusion in doped and pure layers separately.───在本文中，通過(guò)分析摻雜層對激子**的影響，建立雙層模型，以系統地描述激子在主體材料層和摻雜層中的濃度分布。

19 、THE TEMPERATURE DEPENDENCE OF THE FRANKEL EXCITON EFFECTIVE MASS───Frankel激子的有效質(zhì)量與溫度的關(guān)系

20 、Keywords Organic semiconductor;Charge transfer;Charge transfer exciton;Electron transfer;───有機半導體;電荷轉移;電荷轉移激子;電子轉移;

21 、As a wide-band semiconductor,ZnO can be used for blue-green,blue and ultraviolet light-emitting devices,owing to its large exciton binding energy and large band width which equals to the wavelength of UV light.───ZnO 的禁帶寬度對應于紫外光的波長(cháng), 可用于制作藍綠光、藍光、紫外光等多種發(fā)光器件。

22 、Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot───半導體量子點(diǎn)中弱耦合激子的性質(zhì)

23 、Keywords exciton;strong-coupling;self-trapping energy;induced potential;───關(guān)鍵詞激子;強耦合;自陷能;誘生勢;

24 、The relation between the exciton binding energy and the spherical quantum dot radius has been calculated using the variational method.───摘要用無(wú)限深勢阱和有限深勢阱2種模型，計算了激子束縛能與球形量子點(diǎn)半徑的關(guān)系。

25 、Preparation of SnO2Nanometer Crystallites and Study of the Optical Propertier of Their Exciton States[J].───引用該論文 余保龍,張桂蘭,湯國慶,鄒炳鎖,陳文駒.

26 、triplet exciton───三重激子

27 、Calculation of exciton energies and binding energies in ZnO film───ZnO薄膜的激子能量和束縛能的計算

28 、Various static and dynamic effects such as soliton excitations, polaron excitations, exciton self-trapped and nonlinear breathers are observed in the simulation.───我們發(fā)現束縛的激子狀態(tài)或束縛的孤子-反孤子狀態(tài)為長(cháng)鏈反式聚乙炔之光激發(fā)態(tài)分子動(dòng)力學(xué)的主要機制。

29 、Specially,an abnormal dispersion phenomena of surface eciton polaritons near the Exciton resonance frequeney is found.───Queisser的錯誤結果,發(fā)現在激子共振頻率附近表面激子極化激元存在異常色散的現象。

30 、Wurtzite ZnO is a wide-bandgap semiconductor, whose band-gap energy is 3.37eV at room temperature and exciton binding energy is 60meV.───ZnO的室溫禁帶寬度為3.37eV，激子束縛能為60meV，具備實(shí)現室溫的紫外受激輻射的條件，因此已經(jīng)成為紫外光電子材料和器件研究領(lǐng)域的熱點(diǎn)之一。

31 、Keywords open-chain stability;exciton;optical absorption band of exciton;numerical simulation;───開(kāi)鏈穩定性;激子;激子吸收峰;自洽變分數值計算法;

32 、Exciton Localization in Corrugated GaAs/AlAs Superlattices Grown on (311) GaAs Substrates───GaAs/AlAs波紋超晶格中的激子局域化研究

33 、Keywords conjugated polymers;photoluminescence;intrachain exciton;interchain exciton;───共軛聚合物;光致發(fā)光;鏈內激子;鏈間激子;

34 、The resent development of exciton in quantum dots is introduced,quasiparticles known as excitons become promising subjects for realizing quantum computing in solid state.───介紹了量子點(diǎn)中激子在量子信息中的最新發(fā)展,在納米結構中的準粒子激子已經(jīng)成為極有應用前景的發(fā)展目標。

35 、triple-state exciton───三線(xiàn)態(tài)激子

36 、The results show that the exciton binding energy decreases as the dot radius increases for infinite confining well model.───對于有限深勢阱模型，當量子點(diǎn)半徑較小時(shí)，束縛能隨著(zhù)量子點(diǎn)的半徑增加而增加；

37 、Effects on exciton confinement and energy transfer in nano-line of low dimension polymer───低維聚合物納米線(xiàn)中的激子限域和能量傳遞效應研究

38 、Keywords circular dichroism;exciton coupled circular dichroism;absoute configuration;───圓二色譜;激子手性法;絕對構型;

39 、ZnO semiconductor is a good material with much application in photoelectricity device due to its wide gap of 3.37eV and large exciton binding energy of 60meV.───寬禁帶ZnO半導體為直接帶隙，室溫帶隙為3.37eV，且束縛激子能高達60meV，是一種具有很大潛在應用價(jià)值的紫外半導體光電器件材料。

40 、frenkel exciton───夫倫克爾激子夫倫克耳激子

41 、Spectroscopic ellipsometry indicates that the quantum effect of ZnO quantum dot leads to the fact that the absorption energy of exciton(3.76 eV) is bigger than the band gap of bulk ZnO.───SE表征發(fā)現ZnO量子點(diǎn)的量子效應導致了ZnO量子點(diǎn)的激子吸收能(3.76eV)比ZnO體晶的能帶隙(3.37eV)大。

42 、The experiments under various excitation power showed that these light emissions are characteristic of self-trapped exciton emission.───不同強度激發(fā)發(fā)光光譜實(shí)驗發(fā)現，這三個(gè)發(fā)光帶都具有自陷激子發(fā)光特征。

43 、intrinsic exciton absorption───本征激發(fā)吸收

44 、bound exciton line───束縛激子譜線(xiàn)

45 、Energy Level Width of Exciton with Oval Orbit in Mesoscopic System───介觀(guān)系統具有橢圓軌跡激子的能級寬度

46 、Because the energy of photo emission at 330nm is much larger than the band gap energy of ZnO, so it can’t be the result of exciton recombination radiation;───330nm發(fā)射峰的能量大于氧化鋅的禁帶寬度，排除了激子復合的可能。

47 、Because of this large binding energy, the exciton is stable at room temperature even in bulk crystals.───正是由于它高的激子結合能，甚至在室溫下在大體積的晶體中激子仍很穩定。

48 、Blue shift appears on the absorb edgea in the absorption spectrum and also on the exciton band edge emission peaks in the luminescence spectrum.───在光致發(fā)光譜中,不僅激子直接復合產(chǎn)生的帶邊發(fā)射產(chǎn)生了藍移,而且陷阱態(tài)復合產(chǎn)生的寬帶發(fā)射也發(fā)生了藍移.

49 、New progress of exciton condensation in coupled quantum wells[J].───引用該論文 閆占彪,郭震寧.

50 、vibration-age could eliminate remaining stress of work piece by making use of period force made by exciton machine on the condition of low frequency.───振動(dòng)時(shí)效借助激振器產(chǎn)生的周期力,使工件在低頻下共振,從而消除和均化了殘余應力。

51 、trapped exciton───俘獲激發(fā)子

52 、Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity───半導體微腔中腔模、重空穴激子模和輕空穴激子模耦合

53 、Internal Excited State of the Strong Coupling Exciton in Polar Crystals Quantum Dot───極性晶體量子點(diǎn)中強耦合激子的內部激發(fā)態(tài)

54 、bound exciton───束縛激子

55 、Keywords ZnO;Luminescence;Exciton emission;Native defect emission;Energy transfer;───發(fā)光;激子發(fā)射;本征缺陷發(fā)射;能量傳遞;

56 、The Exciton Absorption and Light Modulation Characteristics of MQW Light Switch Devices───多量子阱光開(kāi)關(guān)器件的激子吸收及光調制特性

57 、State-filling effects of exciton in quantum dot array are observed.───發(fā)現許多正負折射交替一維光子晶體新特性。

58 、The peak positions of the exciton emission lines in the PL spectra correspond quite well to the energies of the fundamental transition determined by SPS and CER data.───再比較PL的峰值訊號和SPS的譜線(xiàn)所得到的躍遷訊號后發(fā)現是相當吻合。

59 、bound exciton state───束縛激子態(tài)

60 、Keywords organic semiconductor;solar cell;transient photovoltage;power conversion efficiency;lifetime;interface;exciton;buffer layer;UV-Vis absorption spectrum;───有機半導體;太陽(yáng)能電池;瞬態(tài)光電壓;能量轉換效率;壽命;紫外-可見(jiàn)吸收光譜;界面;緩沖層;激子;

61 、The spectrum variation is due to the exciton ionization in electric field.───光譜由紅變藍的根源是激子的電場(chǎng)離化。

62 、neutral donor bound exciton───中性施主約束激子

63 、The resent development of exciton in quantum dots is introduced, quasiparticles known as excitons become promising subjects for realizing quantum computing in solid state.───介紹了量子點(diǎn)中激子在量子信息中的最新發(fā)展，在納米結構中的準粒子激子已經(jīng)成為極有應用前景的發(fā)展目標。

64 、neutral bound exciton───中性約束激子

65 、Keywords rganic molelule exciton carrier;───有機分子;激子;載流子;

66 、Dynamical Localization of an Exciton Confined in Two Quantum Dot Molecular Driven by an AC Electric Field───雙量子點(diǎn)分子中激子的動(dòng)態(tài)局域化行為

67 、Dynamic behaviours of an exciton confined in coupled quantum dots driven by a high alternating current electrical field───在強交變電場(chǎng)驅動(dòng)下線(xiàn)形三量子點(diǎn)分子中激子的動(dòng)態(tài)局域化行為

68 、The Ground State Effective Hamiltonian of the Strong Coupling One-Dimensional Optical Exciton───強耦合一維激子的基態(tài)有效哈密頓量

69 、multiple exciton generation───多激子產(chǎn)生

70 、In this paper,we introduced the dresse d exciton model of the semiconductor micro-cavity device.───本文建立了半導體微腔的綴飾激子模型。

71 、Keywords STM imaged;exciton dynamics;surface adsorbation;───STM圖象;激子動(dòng)力學(xué);表面吸附;

72 、diamagnetic exciton───反磁激子

73 、two-mode exciton───雙模激子

74 、room-temperature exciton───室溫激子

75 、Behavior of Exciton in a PtI Complex in Electric Field───PtI化合物激子的靜電場(chǎng)行為

76 、Dynamic behaviours of an exciton confined in coupled quantum dots driven by an alternating current electrical field───交變電場(chǎng)驅動(dòng)下耦合雙量子點(diǎn)中激子的動(dòng)力學(xué)行為

77 、Exciton Binding Energy and Exciton Oscillator Strength of GaN-based Quantum-well Structure───GaN基量子阱激子結合能和激子光躍遷強度

78 、THE VIBRATION-QUENCHING OF THE EXCITON AND THE HUANG-RHYS FACTOR IN THE QUASI ONE-DIMENSIONAL ANTIFERROMAGNET CMC───一維反鐵磁體二水CsMnCl_3中激子的振動(dòng)猝滅和黃昆-Rhys因子

79 、The parameters that describe the temperature dependence of the transition energy and broadening parameter of the fundamental band-edge exciton have been evaluated and discussed.───根據溫度變化所得到的躍遷訊號和展寬系數，皆有討論。

80 、An Investigation of the Factors Affecting Quantum Size Effects of the Confined Exciton Ground State Energy in the Semiconductor Quantum Dots───受限激子基態(tài)能量量子尺寸效應有關(guān)問(wèn)題的探討

QWE什么意思？

1、網(wǎng)絡(luò )用語(yǔ)qwe的意思是“游戲連招”。

2、網(wǎng)絡(luò )用語(yǔ)“qwe”出自網(wǎng)絡(luò )游戲英雄聯(lián)盟，在英雄聯(lián)盟游戲中，玩家需要控制鍵盤(pán)上的qwer四個(gè)按鍵來(lái)實(shí)現攻擊，所以網(wǎng)友們就將攻擊連招簡(jiǎn)化為“qwe”。

3、“qwe”這個(gè)網(wǎng)絡(luò )用語(yǔ)現在也經(jīng)常出現在其他的網(wǎng)絡(luò )游戲之中，當網(wǎng)友需要使用連招的時(shí)候，就會(huì )激動(dòng)的說(shuō)出“qwe”，以此來(lái)表示自己馬上就要使用特定的招數了。

QWE什么意思？

QWE abbr.quantum well exciton 量子阱激子 在lol中qwe代表三個(gè)技能，連在一起就是連招一般都說(shuō)qweR。